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Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy

Oliver, R. A. / El-Ella, H. A. R. / Collins, D. P. / Reid, B. / Zhang, Y. / Christie, F. / Kappers, M. J. / Taylor, R. A.

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Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy

Oliver, R. A. / El-Ella, H. A. R. / Collins, D. P. / Reid, B. / Zhang, Y. / Christie, F. / Kappers, M. J. / Taylor, R. A.

Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy

Oliver, R. A. / El-Ella, H. A. R. / Collins, D. P. / Reid, B. / Zhang, Y. / Christie, F. / Kappers, M. J. / Taylor, R. A.

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Title:

Growth of InGaN quantum dots with AlGaN barrier layers via modified droplet epitaxy

Contributors:

Oliver, R. A. (author) / El-Ella, H. A. R. (author) / Collins, D. P. (author) / Reid, B. (author) / Zhang, Y. (author) / Christie, F. (author) / Kappers, M. J. (author) / Taylor, R. A. (author)

Published in:

MATERIALS SCIENCE AND ENGINEERING B ADVANCED FUNCTIONAL SOLID STATE MATERIALS ; 178 ; 1390-1394

Publication date:

2013-01-01

Size:

5 pages

ISSN:

0921-5107

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Naranjo, F. B. / Fernandez, S. / Sanchez-Garcia, M. A. et al. | British Library Online Contents | 2002

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Surface roughness of GaN and thin AlGaN layers grown by molecular beam epitaxy

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