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    High-frequency and switching performance investigations of novel lightly doped drain and source hetero-material-gate CNTFET

    New search for: Wang, W.
    New search for: Zhang, T.
    New search for: Zhang, L.
    New search for: Li, N.
    New search for: Yue, G.
    New search for: Yang, X.

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    High-frequency and switching performance investigations of novel lightly doped drain and source hetero-material-gate CNTFET

    New search for: Wang, W.
    New search for: Zhang, T.
    New search for: Zhang, L.
    New search for: Li, N.
    New search for: Yue, G.
    New search for: Yang, X.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    High-frequency and switching performance investigations of novel lightly doped drain and source hetero-material-gate CNTFET

    New search for: Wang, W.
    New search for: Zhang, T.
    New search for: Zhang, L.
    New search for: Li, N.
    New search for: Yue, G.
    New search for: Yang, X.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    High-frequency and switching performance investigations of novel lightly doped drain and source hetero-material-gate CNTFET

    Contributors:

    Wang, W. (author) / Zhang, T. (author) / Zhang, L. (author) / Li, N. (author) / Yue, G. (author) / Yang, X. (author)

    Published in:

    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING ; 21 ; 132-139

    Publication date:

    2014-01-01

    Size:

    8 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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