Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres: Fid-Bau Portal

Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres

Han, N. / Park, Y. J. / Han, M. / Ryu, B. D. / Ko, K. B. / Chandramohan, S. / Choi, C. J. / Cuong, T. V. / Hong, C. H.

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Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres

Han, N. / Park, Y. J. / Han, M. / Ryu, B. D. / Ko, K. B. / Chandramohan, S. / Choi, C. J. / Cuong, T. V. / Hong, C. H.

Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres

Han, N. / Park, Y. J. / Han, M. / Ryu, B. D. / Ko, K. B. / Chandramohan, S. / Choi, C. J. / Cuong, T. V. / Hong, C. H.

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Document information

Title:

Threading dislocation reduction in epitaxial GaN using V-groove patterned sapphire substrate with embedded silica nanospheres

Contributors:

Han, N. (author) / Park, Y. J. (author) / Han, M. (author) / Ryu, B. D. (author) / Ko, K. B. (author) / Chandramohan, S. (author) / Choi, C. J. (author) / Cuong, T. V. (author) / Hong, C. H. (author)

Published in:

MATERIALS LETTERS ; 123 ; 97-100

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0167-577X

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1105 / 530

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