Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique: Fid-Bau Portal

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

Kato, T. / Eto, K. / Takagi, S. / Miura, T. / Urakami, Y. / Kondo, H. / Hirose, F. / Okumura, H.

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Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

Kato, T. / Eto, K. / Takagi, S. / Miura, T. / Urakami, Y. / Kondo, H. / Hirose, F. / Okumura, H.

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

Kato, T. / Eto, K. / Takagi, S. / Miura, T. / Urakami, Y. / Kondo, H. / Hirose, F. / Okumura, H.

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Title:

Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique

Contributors:

Kato, T. (author) / Eto, K. (author) / Takagi, S. (author) / Miura, T. (author) / Urakami, Y. (author) / Kondo, H. (author) / Hirose, F. (author) / Okumura, H. (author) / Okumura, H. / Harima, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 47-50

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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