Fast Growth Rate Epitaxy on 4^o Off-Cut 4-Inch Diameter 4H-SiC Wafers: Fid-Bau Portal

Fast Growth Rate Epitaxy on 4^o Off-Cut 4-Inch Diameter 4H-SiC Wafers

Hassan, J.U. / Bae, H.T. / Lilja, L. / Farkas, I. / Kim, I. / Stenberg, P. / Sun, J.W. / Kordina, O. / Bergman, P. / Ha, S.Y.

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Fast Growth Rate Epitaxy on 4^o Off-Cut 4-Inch Diameter 4H-SiC Wafers

Hassan, J.U. / Bae, H.T. / Lilja, L. / Farkas, I. / Kim, I. / Stenberg, P. / Sun, J.W. / Kordina, O. / Bergman, P. / Ha, S.Y.

Fast Growth Rate Epitaxy on 4^o Off-Cut 4-Inch Diameter 4H-SiC Wafers

Hassan, J.U. / Bae, H.T. / Lilja, L. / Farkas, I. / Kim, I. / Stenberg, P. / Sun, J.W. / Kordina, O. / Bergman, P. / Ha, S.Y.

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Document information

Title:

Fast Growth Rate Epitaxy on 4^o Off-Cut 4-Inch Diameter 4H-SiC Wafers

Contributors:

Hassan, J.U. (author) / Bae, H.T. (author) / Lilja, L. (author) / Farkas, I. (author) / Kim, I. (author) / Stenberg, P. (author) / Sun, J.W. (author) / Kordina, O. (author) / Bergman, P. (author) / Ha, S.Y. (author)

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 179-182

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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