Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer: Fid-Bau Portal

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Wang, H.H. / Wu, F.Z. / Byrapa, S.Y. / Yang, Y. / Raghothamachar, B. / Dudley, M. / Chung, G. / Zhang, J. / Thomas, B. / Sanchez, E.

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Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Wang, H.H. / Wu, F.Z. / Byrapa, S.Y. / Yang, Y. / Raghothamachar, B. / Dudley, M. / Chung, G. / Zhang, J. / Thomas, B. / Sanchez, E.

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Wang, H.H. / Wu, F.Z. / Byrapa, S.Y. / Yang, Y. / Raghothamachar, B. / Dudley, M. / Chung, G. / Zhang, J. / Thomas, B. / Sanchez, E.

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Title:

Study of V and Y Shape Frank-Type Stacking Faults Formation in 4H-SiC Epilayer

Contributors:

Wang, H.H. (author) / Wu, F.Z. (author) / Byrapa, S.Y. (author) / Yang, Y. (author) / Raghothamachar, B. (author) / Dudley, M. (author) / Chung, G. (author) / Zhang, J. (author) / Thomas, B. (author) / Sanchez, E. (author)

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 332-337

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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