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    Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

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    Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

    New search for: Kojima, K.
    New search for: Kato, T.
    New search for: Ito, S.
    New search for: Kojima, J.
    New search for: Hirose, F.
    New search for: Kito, Y.
    New search for: Yamauchi, S.
    New search for: Nishikawa, K.
    New search for: Adachi, A.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

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    Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

    New search for: Kojima, K.
    New search for: Kato, T.
    New search for: Ito, S.
    New search for: Kojima, J.
    New search for: Hirose, F.
    New search for: Kito, Y.
    New search for: Yamauchi, S.
    New search for: Nishikawa, K.
    New search for: Adachi, A.
    New search for: Monakhov, E.V.
    New search for: Hornos, T.
    New search for: Svensson, B.G.

    Access

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    Document information
    Title:

    Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

    Contributors:

    Kojima, K. (author) / Kato, T. (author) / Ito, S. (author) / Kojima, J. (author) / Hirose, F. (author) / Kito, Y. (author) / Yamauchi, S. (author) / Nishikawa, K. (author) / Adachi, A. (author) / Monakhov, E.V.

    Published in:

    Silicon Carbide and Related Materials 2010 ; 8-11

    MATERIALS SCIENCE FORUM ; 679/680

    Publication date:

    2011-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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