Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide: Fid-Bau Portal

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide

Sugiyama, N. / Yamada, M. / Urakami, Y. / Kobayashi, M. / Masuda, T. / Shigetoh, K. / Gunjishima, I. / Hirose, F. / Onda, S.

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Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide

Sugiyama, N. / Yamada, M. / Urakami, Y. / Kobayashi, M. / Masuda, T. / Shigetoh, K. / Gunjishima, I. / Hirose, F. / Onda, S.

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide

Sugiyama, N. / Yamada, M. / Urakami, Y. / Kobayashi, M. / Masuda, T. / Shigetoh, K. / Gunjishima, I. / Hirose, F. / Onda, S.

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Title:

Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide

Contributors:

Sugiyama, N. (author) / Yamada, M. (author) / Urakami, Y. (author) / Kobayashi, M. (author) / Masuda, T. (author) / Shigetoh, K. (author) / Gunjishima, I. (author) / Hirose, F. (author) / Onda, S. (author) / Okumura, H.

Published in:

Silicon Carbide and Related Materials 2013 PART 1 Selected, peer reviewed papers from the 15^t^h International Conference on Silicon Carbide and Related Materials, (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan ; 386-389

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution

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Defects in Czochralski-grown silicon crystals investigated by positron annihilation

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Intrinsic Defects in Silicon Carbide Polytypes

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Characterisation and Defects in Silicon Carbide

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