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Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
Deep Traps in 4H-SiC MOS Capacitors Investigated by Deep Level Transient Spectroscopy
Sveinbjomsson, E.O. (author) / Gislason, O. (author) / Okumura, H. / Harima, H. / Kimoto, T. / Yoshimoto, M. / Watanabe, H. / Hatayama, T. / Matsuura, H. / Funaki, T.
2014-01-01
4 pages
Article (Journal)
English
DDC:
620.11
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