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    Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

    New search for: Tokuda, Y.
    New search for: Matsuoka, Y.
    New search for: Ueda, H.
    New search for: Ishiguro, O.
    New search for: Soejima, N.
    New search for: Kachi, T.

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    Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

    New search for: Tokuda, Y.
    New search for: Matsuoka, Y.
    New search for: Ueda, H.
    New search for: Ishiguro, O.
    New search for: Soejima, N.
    New search for: Kachi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

    New search for: Tokuda, Y.
    New search for: Matsuoka, Y.
    New search for: Ueda, H.
    New search for: Ishiguro, O.
    New search for: Soejima, N.
    New search for: Kachi, T.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
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    Document information
    Title:

    Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

    Contributors:

    Tokuda, Y. (author) / Matsuoka, Y. (author) / Ueda, H. (author) / Ishiguro, O. (author) / Soejima, N. (author) / Kachi, T. (author)

    Published in:

    MATERIALS SCIENCE FORUM ; 600/603 ; 1297-1300

    Publication date:

    2009-01-01

    Size:

    4 pages

    ISSN:

    0255-5476

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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