1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer: Fid-Bau Portal

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer

Ryu, S.H. / Jonas, C. / Capell, C. / Lemma, Y. / Agarwal, A. / McNutt, T. / Grider, D. / Allen, S.T. / Palmour, J.W.

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1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer

Ryu, S.H. / Jonas, C. / Capell, C. / Lemma, Y. / Agarwal, A. / McNutt, T. / Grider, D. / Allen, S.T. / Palmour, J.W.

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer

Ryu, S.H. / Jonas, C. / Capell, C. / Lemma, Y. / Agarwal, A. / McNutt, T. / Grider, D. / Allen, S.T. / Palmour, J.W.

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Check availability in my library

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Title:

1200 V 4H-SiC DMOSFET with an Integrated Gate Buffer

Contributors:

Ryu, S.H. (author) / Jonas, C. (author) / Capell, C. (author) / Lemma, Y. (author) / Agarwal, A. (author) / McNutt, T. (author) / Grider, D. (author) / Allen, S.T. (author) / Palmour, J.W. (author) / Okumura, H.

Published in:

Silicon Carbide and Related Materials 2013 ; 939-942

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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