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20 kV 4H-SiC N-IGBTs

Ryu, S.H. / Capell, C. / Jonas, C. / O Loughlin, M.J. / Clayton, J. / van Brunt, E. / Lam, K. / Richmond, J. / Kadavelugu, A. / Bhattacharya, S.

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20 kV 4H-SiC N-IGBTs

Ryu, S.H. / Capell, C. / Jonas, C. / O Loughlin, M.J. / Clayton, J. / van Brunt, E. / Lam, K. / Richmond, J. / Kadavelugu, A. / Bhattacharya, S.

20 kV 4H-SiC N-IGBTs

Ryu, S.H. / Capell, C. / Jonas, C. / O Loughlin, M.J. / Clayton, J. / van Brunt, E. / Lam, K. / Richmond, J. / Kadavelugu, A. / Bhattacharya, S.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

20 kV 4H-SiC N-IGBTs

Contributors:

Ryu, S.H. (author) / Capell, C. (author) / Jonas, C. (author) / O Loughlin, M.J. (author) / Clayton, J. (author) / van Brunt, E. (author) / Lam, K. (author) / Richmond, J. (author) / Kadavelugu, A. (author) / Bhattacharya, S. (author)

Published in:

Silicon Carbide and Related Materials 2013 ; 1030-1033

MATERIALS SCIENCE FORUM ; 778/780

Publication date:

2014-01-01

Size:

4 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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