Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity: Fid-Bau Portal

Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

Lin, Y. C. / Dumcenco, D. O. / Komsa, H. P. / Niimi, Y. / Krasheninnikov, A. V. / Huang, Y. S. / Suenaga, K.

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Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

Lin, Y. C. / Dumcenco, D. O. / Komsa, H. P. / Niimi, Y. / Krasheninnikov, A. V. / Huang, Y. S. / Suenaga, K.

Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

Lin, Y. C. / Dumcenco, D. O. / Komsa, H. P. / Niimi, Y. / Krasheninnikov, A. V. / Huang, Y. S. / Suenaga, K.

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Title:

Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity

Contributors:

Lin, Y. C. (author) / Dumcenco, D. O. (author) / Komsa, H. P. (author) / Niimi, Y. (author) / Krasheninnikov, A. V. (author) / Huang, Y. S. (author) / Suenaga, K. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 2857-2861

Publication date:

2014-01-01

Size:

5 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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