High-Mobility Field-Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers: Fid-Bau Portal

High-Mobility Field-Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers

Tseng, H. R. / Phan, H. / Luo, C. / Wang, M. / Perez, L. A. / Patel, S. N. / Ying, L. / Kramer, E. J. / Nguyen, T. Q. / Bazan, G. C.

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High-Mobility Field-Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers

Tseng, H. R. / Phan, H. / Luo, C. / Wang, M. / Perez, L. A. / Patel, S. N. / Ying, L. / Kramer, E. J. / Nguyen, T. Q. / Bazan, G. C.

High-Mobility Field-Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers

Tseng, H. R. / Phan, H. / Luo, C. / Wang, M. / Perez, L. A. / Patel, S. N. / Ying, L. / Kramer, E. J. / Nguyen, T. Q. / Bazan, G. C.

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Document information

Title:

High-Mobility Field-Effect Transistors Fabricated with Macroscopic Aligned Semiconducting Polymers

Contributors:

Tseng, H. R. (author) / Phan, H. (author) / Luo, C. (author) / Wang, M. (author) / Perez, L. A. (author) / Patel, S. N. (author) / Ying, L. (author) / Kramer, E. J. (author) / Nguyen, T. Q. (author) / Bazan, G. C. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 2993-2998

Publication date:

2014-01-01

Size:

6 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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