High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates: Fid-Bau Portal

High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates

Itaka, K. / Yamashiro, M. / Yamaguchi, J. / Haemori, M. / Yaginuma, S. / Matsumoto, Y. / Kondo, M. / Koinuma, H.

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High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates

Itaka, K. / Yamashiro, M. / Yamaguchi, J. / Haemori, M. / Yaginuma, S. / Matsumoto, Y. / Kondo, M. / Koinuma, H.

High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates

Itaka, K. / Yamashiro, M. / Yamaguchi, J. / Haemori, M. / Yaginuma, S. / Matsumoto, Y. / Kondo, M. / Koinuma, H.

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Document information

Title:

High-Mobility C60 Field-Effect Transistors Fabricated on Molecular- Wetting Controlled Substrates

Contributors:

Itaka, K. (author) / Yamashiro, M. (author) / Yamaguchi, J. (author) / Haemori, M. (author) / Yaginuma, S. (author) / Matsumoto, Y. (author) / Kondo, M. (author) / Koinuma, H. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 18 ; 1713-1716

Publication date:

2006-01-01

Size:

4 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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