Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors: Fid-Bau Portal

Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

Yoo, S. / Yoon, J. Y. / Ryu, J. / Kim, Y. H. / Ka, J. W. / Yi, M. H. / Jang, K. S.

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Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

Yoo, S. / Yoon, J. Y. / Ryu, J. / Kim, Y. H. / Ka, J. W. / Yi, M. H. / Jang, K. S.

Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

Yoo, S. / Yoon, J. Y. / Ryu, J. / Kim, Y. H. / Ka, J. W. / Yi, M. H. / Jang, K. S.

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Check availability in my library

Order at Subito €

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Document information

Title:

Low-temperature-annealed alumina/polyimide gate insulators for solution-processed ZnO thin-film transistors

Contributors:

Yoo, S. (author) / Yoon, J. Y. (author) / Ryu, J. (author) / Kim, Y. H. (author) / Ka, J. W. (author) / Yi, M. H. (author) / Jang, K. S. (author)

Published in:

APPLIED SURFACE SCIENCE ; 313 ; 382-388

Publication date:

2014-01-01

Size:

7 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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