GaN Laterally Overgrown on Sapphire by Low Pressure Hydride Vapor Phase Epitaxy

Napierala, J. / Martin, D. / Buhlmann, H. J. et al. | British Library Online Contents | 2004

Polarity dependent structure and optical properties of freestanding GaN layers grown by hydride vapor phase epitaxy

Hu, Q. / Wei, T. / Duan, R. et al. | British Library Online Contents | 2012

Hydride vapor phase epitaxy of GaN on self-organized patterned graphene masks

Zhao, Z. D. / Wang, B. / Xu, W. et al. | British Library Online Contents | 2015

The role of inversion domain boundaries in fabricating crack-free GaN films on sapphire substrates by hydride vapor phase epitaxy

Ahn, Y. N. / Lee, S. H. / Lim, S. K. et al. | British Library Online Contents | 2015

Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy

Hiramatsu, K. / Matsushima, H. / Shibata, T. et al. | British Library Online Contents | 1999