Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium: Fid-Bau Portal

Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium

Jia, S. P. / Chen, G. F. / He, W. / Dai, P. / Chen, J. X. / Lu, S. L. / Yang, H.

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Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium

Jia, S. P. / Chen, G. F. / He, W. / Dai, P. / Chen, J. X. / Lu, S. L. / Yang, H.

Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium

Jia, S. P. / Chen, G. F. / He, W. / Dai, P. / Chen, J. X. / Lu, S. L. / Yang, H.

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Title:

Effects of ultrathin AlAs interfacial layer on the structure and optical properties of GaInP epilayer grown on germanium

Contributors:

Jia, S. P. (author) / Chen, G. F. (author) / He, W. (author) / Dai, P. (author) / Chen, J. X. (author) / Lu, S. L. (author) / Yang, H. (author)

Published in:

APPLIED SURFACE SCIENCE ; 317 ; 828-832

Publication date:

2014-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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Electronic structure of ultrathin AlAs(100) layers buried in GaAs

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