Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy: Fid-Bau Portal

Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

Yoshikane, T. / Urakami, A. / Koizumi, A. / Hisadome, S. / Tabuchi, M. / Inoue, K. / Fujiwara, Y. / Takeda, Y.

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Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

Yoshikane, T. / Urakami, A. / Koizumi, A. / Hisadome, S. / Tabuchi, M. / Inoue, K. / Fujiwara, Y. / Takeda, Y.

Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

Yoshikane, T. / Urakami, A. / Koizumi, A. / Hisadome, S. / Tabuchi, M. / Inoue, K. / Fujiwara, Y. / Takeda, Y.

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Title:

Effects of growth sequence on atomic level interfacial structures and characteristics of GaInP/GaAs/GaInP double heterostructures grown by low-pressure organometallic vapor phase epitaxy

Contributors:

Yoshikane, T. (author) / Urakami, A. (author) / Koizumi, A. (author) / Hisadome, S. (author) / Tabuchi, M. (author) / Inoue, K. (author) / Fujiwara, Y. (author) / Takeda, Y. (author)

Published in:

APPLIED SURFACE SCIENCE ; 237 ; 246-250

Publication date:

2004-01-01

Size:

5 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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