Transistors: Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed from P- and N-Type Electrolyte Gated Transistors (Adv. Mater. 41/2014): Fid-Bau Portal

Transistors: Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed from P- and N-Type Electrolyte Gated Transistors (Adv. Mater. 41/2014)

Hong, K. / Kim, Y. H. / Kim, S. H. / Xie, W. / Xu, W. D. / Kim, C. H. / Frisbie, C. D.

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Transistors: Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed from P- and N-Type Electrolyte Gated Transistors (Adv. Mater. 41/2014)

Hong, K. / Kim, Y. H. / Kim, S. H. / Xie, W. / Xu, W. D. / Kim, C. H. / Frisbie, C. D.

Transistors: Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed from P- and N-Type Electrolyte Gated Transistors (Adv. Mater. 41/2014)

Hong, K. / Kim, Y. H. / Kim, S. H. / Xie, W. / Xu, W. D. / Kim, C. H. / Frisbie, C. D.

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Document information

Title:

Transistors: Aerosol Jet Printed, Sub-2 V Complementary Circuits Constructed from P- and N-Type Electrolyte Gated Transistors (Adv. Mater. 41/2014)

Contributors:

Hong, K. (author) / Kim, Y. H. (author) / Kim, S. H. (author) / Xie, W. (author) / Xu, W. D. (author) / Kim, C. H. (author) / Frisbie, C. D. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 7131-7131

Publication date:

2014-01-01

Size:

1 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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