Organic Field-Effect Transistors: The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics (Adv. Mater. 42/2014): Fid-Bau Portal

Organic Field-Effect Transistors: The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics (Adv. Mater. 42/2014)

Kim, J. / Jang, J. / Kim, K. / Kim, H. / Kim, S. H. / Park, C. E.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Organic Field-Effect Transistors: The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics (Adv. Mater. 42/2014)

Kim, J. / Jang, J. / Kim, K. / Kim, H. / Kim, S. H. / Park, C. E.

Organic Field-Effect Transistors: The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics (Adv. Mater. 42/2014)

Kim, J. / Jang, J. / Kim, K. / Kim, H. / Kim, S. H. / Park, C. E.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

Export, share and cite

Document information

Title:

Organic Field-Effect Transistors: The Origin of Excellent Gate-Bias Stress Stability in Organic Field-Effect Transistors Employing Fluorinated-Polymer Gate Dielectrics (Adv. Mater. 42/2014)

Contributors:

Kim, J. (author) / Jang, J. (author) / Kim, K. (author) / Kim, H. (author) / Kim, S. H. (author) / Park, C. E. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 7280-7280

Publication date:

2014-01-01

Size:

1 pages

ISSN:

0935-9648

Type of media:

Article (Journal)