Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient: Fid-Bau Portal

Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient

Fabiano, S. / Usta, H. / Forchheimer, R. / Crispin, X. / Facchetti, A. / Berggren, M.

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Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient

Fabiano, S. / Usta, H. / Forchheimer, R. / Crispin, X. / Facchetti, A. / Berggren, M.

Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient

Fabiano, S. / Usta, H. / Forchheimer, R. / Crispin, X. / Facchetti, A. / Berggren, M.

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Check availability in my library

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Title:

Selective Remanent Ambipolar Charge Transport in Polymeric Field-Effect Transistors For High-Performance Logic Circuits Fabricated in Ambient

Contributors:

Fabiano, S. (author) / Usta, H. (author) / Forchheimer, R. (author) / Crispin, X. (author) / Facchetti, A. (author) / Berggren, M. (author)

Published in:

ADVANCED MATERIALS -DEERFIELD BEACH THEN WEINHEIM- ; 26 ; 7438-7443

Publication date:

2014-01-01

Size:

6 pages

ISSN:

0935-9648

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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