A platform for research: civil engineering, architecture and urbanism
Effect of piezoelectricity on critical thickness for misfit dislocation formation at InGaN/GaN interface
Effect of piezoelectricity on critical thickness for misfit dislocation formation at InGaN/GaN interface
Effect of piezoelectricity on critical thickness for misfit dislocation formation at InGaN/GaN interface
Mishra, D. (author) / Cho, Y. H. (author) / Shim, M. B. (author) / Hwang, S. (author) / Kim, S. (author) / Park, C. Y. (author) / Seo, S. Y. (author) / Yoo, S. H. (author) / Park, S. H. (author) / Pak, Y. E. (author)
COMPUTATIONAL MATERIALS SCIENCE ; 97 ; 254-262
2015-01-01
9 pages
Article (Journal)
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers
British Library Online Contents | 2012
|British Library Online Contents | 1995
|Theoretical study of misfit dislocation in interface dynamics
British Library Online Contents | 2008
|The dislocation core misfit potential
British Library Online Contents | 2015
|The dislocation core misfit potential
British Library Online Contents | 2015
|