Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers: Fid-Bau Portal

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

Zhang, X. / Miyazawa, T. / Tsuchida, H.

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Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

Zhang, X. / Miyazawa, T. / Tsuchida, H.

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

Zhang, X. / Miyazawa, T. / Tsuchida, H.

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Access via TIB

Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Critical Conditions of Misfit Dislocation Formation in 4H-SiC Epilayers

Contributors:

Zhang, X. (author) / Miyazawa, T. (author) / Tsuchida, H. (author)

Published in:

MATERIALS SCIENCE FORUM ; 717/720 ; 313-318

Publication date:

2012-01-01

Size:

6 pages

ISSN:

0255-5476

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.11

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