Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation: Fid-Bau Portal

Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

Meddeb, H. / Bearda, T. / Recaman Payo, M. / Abdelwahab, I. / Abdulraheem, Y. / Ezzaouia, H. / Gordon, I. / Szlufcik, J. / Poortmans, J.

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Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

Meddeb, H. / Bearda, T. / Recaman Payo, M. / Abdelwahab, I. / Abdulraheem, Y. / Ezzaouia, H. / Gordon, I. / Szlufcik, J. / Poortmans, J.

Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

Meddeb, H. / Bearda, T. / Recaman Payo, M. / Abdelwahab, I. / Abdulraheem, Y. / Ezzaouia, H. / Gordon, I. / Szlufcik, J. / Poortmans, J.

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Title:

Wet chemical treatment of boron doped emitters on n-type (100) c-Si prior to amorphous silicon passivation

Contributors:

Meddeb, H. (author) / Bearda, T. (author) / Recaman Payo, M. (author) / Abdelwahab, I. (author) / Abdulraheem, Y. (author) / Ezzaouia, H. (author) / Gordon, I. (author) / Szlufcik, J. (author) / Poortmans, J. (author)

Published in:

APPLIED SURFACE SCIENCE ; 328 ; 140-145

Publication date:

2015-01-01

Size:

6 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 621.35

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