A platform for research: civil engineering, architecture and urbanism
Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells
Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.
Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells
Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.
Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells
Ji Yeon Hyun (author) / Soohyun Bae (author) / Yoon Chung Nam (author) / Dongkyun Kang (author) / Sang-Won Lee (author) / Donghwan Kim (author) / Jooyoung Park (author) / Yoonmook Kang (author) / Hae-Seok Lee (author)
2019
Article (Journal)
Electronic Resource
Unknown
Metadata by DOAJ is licensed under CC BY-SA 1.0
British Library Online Contents | 2015
|Investigation of p-type nanocrystalline silicon emitters for silicon heterojunction solar cells
British Library Online Contents | 2015
|Hydrogen passivation of multicrystalline silicon solar cells
British Library Online Contents | 1999
|Defect passivation of multicrystalline silicon solar cells by silicon nitride coatings
British Library Online Contents | 2006
|British Library Online Contents | 2017
|