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Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method
Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method
Formation of GeSn layers on Si (001) substrates at high growth temperature and high deposition rate by sputter epitaxy method
Tsukamoto, T. (author) / Hirose, N. (author) / Kasamatsu, A. (author) / Mimura, T. (author) / Matsui, T. (author) / Suda, Y. (author)
JOURNAL OF MATERIALS SCIENCE ; 50 ; 4366-4370
2015-01-01
5 pages
Article (Journal)
English
DDC:
620.11
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