A platform for research: civil engineering, architecture and urbanism
Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors
Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors
Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors
Portavoce, A. (author) / Perrin Toinin, J. (author) / Hoummada, K. (author) / Raymond, L. (author) / Tréglia, G. (author)
COMPUTATIONAL MATERIALS SCIENCE ; 114 ; 23-32
2016-01-01
10 pages
Article (Journal)
English
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Stress influence on substitutional impurity segregation on dislocation loops in IV–IV semiconductors
British Library Online Contents | 2016
|Stress-Driven Collective Nucleation of Dislocation Loops
British Library Conference Proceedings | 1998
|Prismatic dislocation loops and concentric dislocation loops in HPHT-grown diamond single crystals
British Library Online Contents | 2003
|Interrelation between Dislocation Loops and an Edge Dislocation
British Library Online Contents | 2005
|Computer Simulation Study on the Impurity Segregation at Extended Lattice Defects in Semiconductors
British Library Conference Proceedings | 1993
|