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Atomistic simulation of the step mobility at the Al–Si(111) crystal–melt interface using molecular dynamics

Saidi, P. / Hoyt, J. J.

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Atomistic simulation of the step mobility at the Al–Si(111) crystal–melt interface using molecular dynamics

Saidi, P. / Hoyt, J. J.

Atomistic simulation of the step mobility at the Al–Si(111) crystal–melt interface using molecular dynamics

Saidi, P. / Hoyt, J. J.

Access

Access via TIB

Check availability in my library

Order at Subito €

Page navigation

Document information

Similar titles

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Document information

Title:

Atomistic simulation of the step mobility at the Al–Si(111) crystal–melt interface using molecular dynamics

Contributors:

Saidi, P. (author) / Hoyt, J. J. (author)

Published in:

COMPUTATIONAL MATERIALS SCIENCE ; 111 ; 137-147

Publication date:

2016-01-01

Size:

11 pages

ISSN:

0927-0256

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.1 / 510

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