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    Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    New search for: Besleaga, C.
    New search for: Stan, G. E.
    New search for: Pintilie, I.
    New search for: Barquinha, P.
    New search for: Fortunato, E.
    New search for: Martins, R.

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    Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    New search for: Besleaga, C.
    New search for: Stan, G. E.
    New search for: Pintilie, I.
    New search for: Barquinha, P.
    New search for: Fortunato, E.
    New search for: Martins, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    New search for: Besleaga, C.
    New search for: Stan, G. E.
    New search for: Pintilie, I.
    New search for: Barquinha, P.
    New search for: Fortunato, E.
    New search for: Martins, R.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor

    Contributors:

    Besleaga, C. (author) / Stan, G. E. (author) / Pintilie, I. (author) / Barquinha, P. (author) / Fortunato, E. (author) / Martins, R. (author)

    Published in:

    APPLIED SURFACE SCIENCE ; 379 ; 270-276

    Publication date:

    2016-01-01

    Size:

    7 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.35

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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