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    Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor

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    Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor

    New search for: Oh, Teresa

    Access

    Access via TIB
    Check availability in my library
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    Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor

    New search for: Oh, Teresa

    Access

    Access via TIB
    Check availability in my library
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    Document information
    Title:

    Tunneling condition at high Schottky barrier and ambipolar transfer characteristics in zinc oxide semiconductor thin film transistor

    Contributors:

    Oh, Teresa (author)

    Published in:

    Materials research bulletin ; 77 ; 1-7

    Publication date:

    2016-01-01

    Size:

    7 pages

    ISSN:

    0025-5408

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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