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    Evaluation of crystallinity of GaN epitaxial layer after wafer dicing

    New search for: Taguchi, Hideyuki
    New search for: Miyake, Shugo
    New search for: Suzuki, Atsushi
    New search for: Kamiyama, Satoshi
    New search for: Fujiwara, Yasufumi

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    Evaluation of crystallinity of GaN epitaxial layer after wafer dicing

    New search for: Taguchi, Hideyuki
    New search for: Miyake, Shugo
    New search for: Suzuki, Atsushi
    New search for: Kamiyama, Satoshi
    New search for: Fujiwara, Yasufumi

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Evaluation of crystallinity of GaN epitaxial layer after wafer dicing

    New search for: Taguchi, Hideyuki
    New search for: Miyake, Shugo
    New search for: Suzuki, Atsushi
    New search for: Kamiyama, Satoshi
    New search for: Fujiwara, Yasufumi

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

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    Document information
    Title:

    Evaluation of crystallinity of GaN epitaxial layer after wafer dicing

    Contributors:

    Taguchi, Hideyuki (author) / Miyake, Shugo (author) / Suzuki, Atsushi (author) / Kamiyama, Satoshi (author) / Fujiwara, Yasufumi (author)

    Published in:

    Materials science in semiconductor processing ; 41 ; 89-91

    Publication date:

    2016-01-01

    Size:

    3 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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