A platform for research: civil engineering, architecture and urbanism
Silicon doped by molecular doping technique: Role of the surface layers of doped Si on the electrical characteristics
Silicon doped by molecular doping technique: Role of the surface layers of doped Si on the electrical characteristics
Silicon doped by molecular doping technique: Role of the surface layers of doped Si on the electrical characteristics
Caccamo, Sebastiano (author) / Puglisi, Rosaria A. (author) / Di Franco, Salvatore (author) / D’Urso, Luisa (author) / Indelicato, Valeria (author) / Italia, Markus (author) / Pannitteri, Salvatore (author) / La Magna, Antonino (author)
Materials science in semiconductor processing ; 42 ; 200-203
2016-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
Delta-Doped Layers of SiC Grown by `Pulse Doping' Technique
British Library Online Contents | 2002
|Influence of doping and microstructure on electrical properties of doped silicon thin films
British Library Online Contents | 2015
|Surface resistance model for silicon ion-doped P-type layers
British Library Online Contents | 1999
|Effects of cobalt doping on the electrical characteristics of Al-doped ZnO varistors
British Library Online Contents | 2010
|Optical and electrical characterization of aluminium doped ZnO layers
British Library Online Contents | 2009
|