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    Channel length influenced contribution of hole and electron trapping effect to threshold voltage stability in organic field effect transistors

    New search for: Padma, N.

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    Channel length influenced contribution of hole and electron trapping effect to threshold voltage stability in organic field effect transistors

    New search for: Padma, N.

    Access

    Access via TIB
    Check availability in my library
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    Channel length influenced contribution of hole and electron trapping effect to threshold voltage stability in organic field effect transistors

    New search for: Padma, N.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
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    Document information
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    Document information
    Title:

    Channel length influenced contribution of hole and electron trapping effect to threshold voltage stability in organic field effect transistors

    Contributors:

    Padma, N. (author)

    Published in:

    Materials science in semiconductor processing ; 39 ; 384-389

    Publication date:

    2015-01-01

    Size:

    6 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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