Fachinformationsdienst BAUdigital

A platform for research: civil engineering, architecture and urbanism

    Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

    New search for: Tsutsui, K.
    New search for: Kobayashi, Y.
    New search for: Kakushima, K.
    New search for: Ahmet, P.
    New search for: Rao, V.R.
    New search for: Iwai, H.
    New search for: Miyazaki, S.
    New search for: Tabata, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

    New search for: Tsutsui, K.
    New search for: Kobayashi, Y.
    New search for: Kakushima, K.
    New search for: Ahmet, P.
    New search for: Rao, V.R.
    New search for: Iwai, H.
    New search for: Miyazaki, S.
    New search for: Tabata, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

    New search for: Tsutsui, K.
    New search for: Kobayashi, Y.
    New search for: Kakushima, K.
    New search for: Ahmet, P.
    New search for: Rao, V.R.
    New search for: Iwai, H.
    New search for: Miyazaki, S.
    New search for: Tabata, H.

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Analysis of Threshold Voltage Variations in Fin Field Effect Transistors

    Contributors:

    Tsutsui, K. (author) / Kobayashi, Y. (author) / Kakushima, K. (author) / Ahmet, P. (author) / Rao, V.R. (author) / Iwai, H. (author) / Miyazaki, S. / Tabata, H.

    Published in:

    Technology Evolution for Silicon Nano-Electronics ; 194-200

    KEY ENGINEERING MATERIALS ; 470

    Publication date:

    2011-01-01

    Size:

    7 pages

    ISSN:

    1013-9826

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.11

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

    Similar titles

    The Concept of "Threshold Voltage" in Organic Field-Effect Transistors

    Horowitz, G. / Hajlaoui, R. / Bouchriha, H. et al. | British Library Online Contents | 1998

    Organic Field-Effect Transistors with a Low Pinch-Off Voltage and a Controllable Threshold Voltage

    Wang, Y. / Liu, Y. Q. / Song, Y. B. et al. | British Library Online Contents | 2008

    Dynamics of Threshold Voltage Shifts in Organic and Amorphous Silicon Field-Effect Transistors

    Mathijssen, S. G. / Colle, M. / Gomes, H. et al. | British Library Online Contents | 2007

    Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field Effect Transistors

    Mathijssen, S. G. / Spijkman, M. J. / Andringa, A. M. et al. | British Library Online Contents | 2010

    Channel length influenced contribution of hole and electron trapping effect to threshold voltage stability in organic field effect transistors

    Padma, N. | British Library Online Contents | 2015

    Back to top