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    Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4

    New search for: Li, Yaqiong
    New search for: Zhang, Lifeng

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    Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4

    New search for: Li, Yaqiong
    New search for: Zhang, Lifeng

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4

    New search for: Li, Yaqiong
    New search for: Zhang, Lifeng

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
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    Document information
    Title:

    Growth and characterization of silicon oxide films formed in the presence of Si, SiC, and Si3N4

    Contributors:

    Li, Yaqiong (author) / Damoah, Lucas Nana Wiredu (author) / Zhang, Lifeng (author)

    Published in:

    Materials science in semiconductor processing ; 54 ; 20-28

    Publication date:

    2016-01-01

    Size:

    9 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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