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    Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer

    New search for: Wu, JiaJi
    New search for: Ye, Cong
    New search for: Zhang, Jieqiong
    New search for: Deng, Tengfei
    New search for: He, Pin
    New search for: Wang, Hao

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    Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer

    New search for: Wu, JiaJi
    New search for: Ye, Cong
    New search for: Zhang, Jieqiong
    New search for: Deng, Tengfei
    New search for: He, Pin
    New search for: Wang, Hao

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer

    New search for: Wu, JiaJi
    New search for: Ye, Cong
    New search for: Zhang, Jieqiong
    New search for: Deng, Tengfei
    New search for: He, Pin
    New search for: Wang, Hao

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Multilevel characteristics for bipolar resistive random access memory based on hafnium doped SiO2 switching layer

    Contributors:

    Wu, JiaJi (author) / Ye, Cong (author) / Zhang, Jieqiong (author) / Deng, Tengfei (author) / He, Pin (author) / Wang, Hao (author)

    Published in:

    Materials science in semiconductor processing ; 43 ; 144-148

    Publication date:

    2016-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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