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    Fracture behavior of single crystal silicon with thermal oxide layer

    New search for: Tsuchiya, Toshiyuki
    New search for: Miyamoto, Kenji
    New search for: Sugano, Koji
    New search for: Tabata, Osamu

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    Fracture behavior of single crystal silicon with thermal oxide layer

    New search for: Tsuchiya, Toshiyuki
    New search for: Miyamoto, Kenji
    New search for: Sugano, Koji
    New search for: Tabata, Osamu

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Fracture behavior of single crystal silicon with thermal oxide layer

    New search for: Tsuchiya, Toshiyuki
    New search for: Miyamoto, Kenji
    New search for: Sugano, Koji
    New search for: Tabata, Osamu

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Fracture behavior of single crystal silicon with thermal oxide layer

    Contributors:

    Tsuchiya, Toshiyuki (author) / Miyamoto, Kenji (author) / Sugano, Koji (author) / Tabata, Osamu (author)

    Published in:

    Engineering fracture mechanics ; 163 ; 523-532

    Publication date:

    2016-01-01

    Size:

    10 pages

    ISSN:

    0013-7944

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.112605

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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