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Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment
Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment
Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment
Lee, Ching-Sung (author) / Liu, Han-Yi (author) / Hsu, Wei-Chou (author) / Chen, Si-Fu (author)
2017-01-01
4 pages
Article (Journal)
English
DDC:
621.38152
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