Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Eine Plattform für die Wissenschaft: Bauingenieurwesen, Architektur und Urbanistik
Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment
Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment
Normally-off AlGaN/AlN/GaN/Si oxide-passivated HEMTs and MOS-HEMTs by using CF4 plasma and ozone water oxidization treatment
Lee, Ching-Sung (Autor:in) / Liu, Han-Yi (Autor:in) / Hsu, Wei-Chou (Autor:in) / Chen, Si-Fu (Autor:in)
01.01.2017
4 pages
Aufsatz (Zeitschrift)
Englisch
DDC:
621.38152
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