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    Effects of Si-doping on characteristics of semi-polar (112̅2) plane Al0.45Ga0.55N epi-layers

    New search for: Dai, Qian
    New search for: Zhang, Xiong
    New search for: Zhao, Jianguo
    New search for: Luan, Huakai
    New search for: Liang, Zongwen
    New search for: Cui, Yiping

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    Effects of Si-doping on characteristics of semi-polar (112̅2) plane Al0.45Ga0.55N epi-layers

    New search for: Dai, Qian
    New search for: Zhang, Xiong
    New search for: Zhao, Jianguo
    New search for: Luan, Huakai
    New search for: Liang, Zongwen
    New search for: Cui, Yiping

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Effects of Si-doping on characteristics of semi-polar (112̅2) plane Al0.45Ga0.55N epi-layers

    New search for: Dai, Qian
    New search for: Zhang, Xiong
    New search for: Zhao, Jianguo
    New search for: Luan, Huakai
    New search for: Liang, Zongwen
    New search for: Cui, Yiping

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
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    Document information
    Title:

    Effects of Si-doping on characteristics of semi-polar (112̅2) plane Al0.45Ga0.55N epi-layers

    Contributors:

    Dai, Qian (author) / Zhang, Xiong (author) / Zhao, Jianguo (author) / Luan, Huakai (author) / Liang, Zongwen (author) / Cui, Yiping (author)

    Published in:

    Materials science in semiconductor processing ; 58 ; 30-33

    Publication date:

    2017-01-01

    Size:

    4 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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