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    Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy

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    Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy

    New search for: Feng, Zhaoqing
    New search for: Feng, Qian
    New search for: Zhang, Jincheng
    New search for: Li, Xiang
    New search for: Li, Fuguo
    New search for: Huang, Lu
    New search for: Chen, Hong-Yan
    New search for: Lu, Hong-Liang
    New search for: Hao, Yue

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy

    New search for: Feng, Zhaoqing
    New search for: Feng, Qian
    New search for: Zhang, Jincheng
    New search for: Li, Xiang
    New search for: Li, Fuguo
    New search for: Huang, Lu
    New search for: Chen, Hong-Yan
    New search for: Lu, Hong-Liang
    New search for: Hao, Yue

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Document information
    Title:

    Band alignment of SiO2/(AlxGa1-x)2O3 (0≤x≤0.49) determined by X-ray photoelectron spectroscopy

    Contributors:

    Feng, Zhaoqing (author) / Feng, Qian (author) / Zhang, Jincheng (author) / Li, Xiang (author) / Li, Fuguo (author) / Huang, Lu (author) / Chen, Hong-Yan (author) / Lu, Hong-Liang (author) / Hao, Yue (author)

    Published in:

    Applied surface science ; 434 ; 440-444

    Publication date:

    2018-01-01

    Size:

    5 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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