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Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties
Ťapajna, M. (author) / Stoklas, R. (author) / Gregušová, D. (author) / Gucmann, F. (author) / Hušeková, K. (author) / Haščík, Š. (author) / Fröhlich, K. (author) / Tóth, L. (author) / Pécz, B. (author) / Brunner, F. (author)
Applied surface science ; 426 ; 656-661
2017-01-01
6 pages
Article (Journal)
English
DDC:
620.44
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