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Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration
Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration
Mechanism of void formation in TiN/AlSiCu/TiN/plasma-enhanced tetraethyl orthosilicate SiO2 multi-layer structures via high-temperature stress migration
Naoe, Takuya (author) / Endoh, Hirohiko (author) / Fuchino, Fumihiro (author) / Miyata, Masanori (author) / Miyake, Hidetsugu (author) / Takahashi, Takuya (author) / Fujimoto, Takaaki (author)
Materials science in semiconductor processing ; 83 ; 239-248
2018-01-01
10 pages
Article (Journal)
English
DDC:
621.38152
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