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    Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

    New search for: Yan, Kai
    New search for: Yao, Wenqing
    New search for: Zhao, Yuanyuan
    New search for: Yang, Liping
    New search for: Cao, Jiangli
    New search for: Zhu, Yongfa

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    Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

    New search for: Yan, Kai
    New search for: Yao, Wenqing
    New search for: Zhao, Yuanyuan
    New search for: Yang, Liping
    New search for: Cao, Jiangli
    New search for: Zhu, Yongfa

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

    New search for: Yan, Kai
    New search for: Yao, Wenqing
    New search for: Zhao, Yuanyuan
    New search for: Yang, Liping
    New search for: Cao, Jiangli
    New search for: Zhu, Yongfa

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Page navigation

    Document information
    Similar titles

    Export, share and cite

    Document information
    Title:

    Oxygen vacancy induced structure change and interface reaction in HfO2 films on native SiO2/Si substrate

    Contributors:

    Yan, Kai (author) / Yao, Wenqing (author) / Zhao, Yuanyuan (author) / Yang, Liping (author) / Cao, Jiangli (author) / Zhu, Yongfa (author)

    Published in:

    Applied surface science ; 390 ; 260-265

    Publication date:

    2016-01-01

    Size:

    6 pages

    ISSN:

    0169-4332

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  620.44

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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