Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing

Liu, B. / Qin, F. / Wang, D. | British Library Online Contents | 2016

Passivation of SiO2/4H–SiC interface defects via electron cyclotron resonance hydrogen–nitrogen mixed plasma pretreatment for SiC surface combined with post-oxidation annealing

Liu, Bingbing / Qin, Fuwen / Wang, Dejun | British Library Online Contents | 2016

Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices

Bae, C. / Lucovsky, G. | British Library Online Contents | 2004

Zn-vapor diffused Er:Yb:LiNbO3 channel waveguides fabricated by means of SiO2 electron cyclotron resonance plasma deposition

Pernas, P. L. / Hernandez, M. J. / Ruiz, E. et al. | British Library Online Contents | 2000

Preparation of Titania Films on Implant Titanium by Electron Cyclotron Resonance Plasma Oxidation

Masumoto, H. / Goto, T. / Honda, Y. et al. | British Library Online Contents | 2007