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Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Reductions in interface defects, Dit, by post-oxidation plasma-assisted nitridation of GaN-SiO2 interfaces in MOS devices
Bae, C. (author) / Lucovsky, G. (author)
APPLIED SURFACE SCIENCE ; 234 ; 475-479
2004-01-01
5 pages
Article (Journal)
English
DDC:
621.35
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