Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study: Fid-Bau Portal

Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study

Teys, S.A.

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Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study

Teys, S.A.

Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study

Teys, S.A.

Access

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Check availability in my library

Order at Subito €

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Document information

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Document information

Title:

Different growth mechanisms of Ge by Stranski-Krastanow on Si (111) and (001) surfaces: An STM study

Contributors:

Teys, S.A. (author)

Published in:

Applied surface science ; 392 ; 1017-1025

Publication date:

2017-01-01

Size:

9 pages

ISSN:

0169-4332

Type of media:

Article (Journal)

Type of material:

Language:

English

Classification:

DDC: 620.44

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