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    Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1−xSnx and Sn interlayers

    New search for: Suzuki, Akihiro
    New search for: Nakatsuka, Osamu
    New search for: Sakashita, Mitsuo
    New search for: Zaima, Shigeaki

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    Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1−xSnx and Sn interlayers

    New search for: Suzuki, Akihiro
    New search for: Nakatsuka, Osamu
    New search for: Sakashita, Mitsuo
    New search for: Zaima, Shigeaki

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1−xSnx and Sn interlayers

    New search for: Suzuki, Akihiro
    New search for: Nakatsuka, Osamu
    New search for: Sakashita, Mitsuo
    New search for: Zaima, Shigeaki

    Access

    Access via TIB
    Check availability in my library
    Order at Subito €

    Access

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    Check availability in my library
    Order at Subito €

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    Document information
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    Document information
    Title:

    Modulation of Fermi level pining position at metal/n-Ge interface by semimetal Ge1−xSnx and Sn interlayers

    Contributors:

    Suzuki, Akihiro (author) / Nakatsuka, Osamu (author) / Sakashita, Mitsuo (author) / Zaima, Shigeaki (author)

    Published in:

    Materials science in semiconductor processing ; 70 ; 162-166

    Publication date:

    2017-01-01

    Size:

    5 pages

    ISSN:

    1369-8001

    Type of media:

    Article (Journal)

    Type of material:

    Print

    Language:

    English

    Classification:

    DDC:  621.38152

    © Metadata Copyright the British Library Board and other contributors. All rights reserved.

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