A platform for research: civil engineering, architecture and urbanism
Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs
Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs
Interaction influence of S/D GeSi lattice mismatch and stress gradient of CESL on nano-scaled strained nMOSFETs
Lee, Chang-Chun (author) / Kuo, Yen-Ting (author) / Liu, Chuan-Hsi (author)
Materials science in semiconductor processing ; 70 ; 254-259
2017-01-01
6 pages
Article (Journal)
English
DDC:
621.38152
© Metadata Copyright the British Library Board and other contributors. All rights reserved.
GeSi-Si strained layer superlattices grown by low-pressure CVD
British Library Online Contents | 1992
|Study of charge carrier quantization in strained Si-nMOSFETs
British Library Online Contents | 2005
|British Library Online Contents | 1995
|LEADING DEVELOPMENTS - CVRD to Test Teck Cominco's CESL Process
Online Contents | 2005
Mechanical strength of GeSi solid solution
British Library Online Contents | 1997
|